TAREAS/TASKS:

Design, modelling, and fabrication of high-performance GaN-based HEMTs:

• Development of nanocale devices by E-Beam Lithography (EBL) and Thermal Scanning Probe Lithography (t-SPL) in normally-on and normally-off HEMT structures

• Exploration of the integration of 2D materials for enhanced HEMT performance

HABILIDADES-CUALIFICACIONES/SKILLS-QUALIFICATIONS: 

• MS Office, Latex, Adobe Illustrator, AutoCAD

• Previous experience on programming (Python, C, LabVIEW, etc) and scientific (Mathematica, Matlab, Origin, etc) or simulation (COMSOL, etc) software will be highly valued 

REQUERIMIENTOS ESPECIFICOS/SPECIFIC REQUIREMENTS:

• Candidates must hold a Master Degree in Electronic/Telecommunication/Materials Engineering or Physics

• Proficiency in English

• Goal-oriented mindset, creativity, teamwork & communication skills

• Previous research experience will be highly valued

BENEFICIOS/BENEFITS:

• The hired researcher will pursue an industrial PhD in a joint program with INDRA Sistemas S. A., a Spanish multinational company, within the project “Chair UPM-INDRA in Microelectronics”.

• Health and social benefits according to Spanish law.

CRITERIOS Y PROCESO DE SELECCION/ELIGIBILITY CRITERIA AND SELECTION PROCESS:

Se aplican las pautas establecidas en el proceso de selección del nuevo Reglamento para el proceso de selección y contratación del personal investigador, personal técnico y personal gestor relacionado con la investigación de la Universidad Politécnica de Madrid, aprobado en la UPM.

COMENTARIOS ADICIONALES/ADDITIONAL COMMENTS:

Applicants should send a motivation letter & CV Jorge Pedrós (j.pedros@upm.es)