TAREAS/TASKS:

Integration of 2D materials with GaN-based high-electron mobility transistors (HEMTs) for advanced ICTs 

HABILIDADES-CUALIFICACIONES/SKILLS-QUALIFICATIONS: 

• Mathematica, Matlab, Origin

• Python, C, LabVIEW programming

• TCAD, COMSOL

• MS Office, Latex, Adobe Illustrator

REQUERIMIENTOS ESPECIFICOS/SPECIFIC REQUIREMENTS:

Previous expertise on some of the following areas:

• Fabrication of GaN-based HEMTs

 • Deposition/transfer of high-k dielectrics and 2D materials

• Reliability and degradation mechanisms

• Cleanroom techniques: electron beam and optical lithographies, metallization,  wet and reactive ion  etching, deposition of dielectrics, etc

• Characterization techniques: atomic force microscopy, scanning electron microscopy, X-ray diffraction, DC, pulsed and RF electrical assessment with parameter and network analyzers, aveform generators, oscilloscopes and arbitrary waveform generators

• Simulation of devices (COMSOL, TCAD, etc) 

BENEFICIOS/BENEFITS:

Health and social benefits according to Spanish law

CRITERIOS Y PROCESO DE SELECCION/ELIGIBILITY CRITERIA AND SELECTION PROCESS:

Se aplican las pautas establecidas en el proceso de selección del nuevo Reglamento para el proceso de selección ycontratación del personal investigador, personal técnico y personal gestor relacionado con la investigación de laUniversidad Politécnica de Madrid, aprobado en la UPM.

COMENTARIOS ADICIONALES/ADDITIONAL COMMENTS:

Applicants should send a motivation letter & CV to Jorge Pedrós (j.pedros@upm.es)